onsemi NTH4L075N065SC1 57mohm Silicon Carbide MOSFET

onsemi NTH4L075N065SC1 57mohm Silicon Carbide MOSFET is housed in a TO-247-4L package and designed to be fast and rugged. The onsemi NTH4L075N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

Features

Typ. R_DS(on) = 57m @ V_GS = 18V
Typ. R_DS(on) = 75m @ V_GS = 15V
Ultra Low Gate Charge (Q_G(tot) = 61nC)
Low Output Capacitance (C_oss = 107pF)

100% Avalanche Tested
T_J = 175°C
This Device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection)

Applications

SMPS (Switching Mode Power Supplies)
Solar inverters

UPS (Uninterruptable Power Supplies)
Energy storages

onsemi NTH4L075N065SC1 57mohm Silicon Carbide MOSFET

Features

Applications

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