Rectron RM135N100HD N-Channel Super Trench Power MOSFET

Rectron RM135N100HD N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide efficient high-frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R_DS(ON) and Q_g. This device is ideal for high-frequency switching and synchronous rectification.

The Rectron RM135N100HD N-Channel Super Trench Power MOSFET is available in a compact TO-263-2L package, ideal for space-constrained applications.

Features

100V drain-source voltage (V_DS)
135A continuous drain current (I_D)
500A pulsed drain current (I_DM)
3.7mΩ typical R_DS(ON)
92nC total gate charge (Q_g)
Excellent Q_g x R_DS(on)
210W maximum power dissipation (P_D)

6400pF input capacitance (C_ISS)
731pF output capacitance (C_OSS)
-55°C To 175°C operating junction and storage temperature range (T_J, T_STG)
TO-263-2L package
Pb-free lead plating
100% UIS tested

Applications

DC-DC converters
High-frequency switching
Synchronous rectification

Test Circuits

Application Circuit Diagram - Rectron RM135N100HD N-Channel Super Trench Power MOSFET

Package Outlinie

Mechanical Drawing - Rectron RM135N100HD N-Channel Super Trench Power MOSFET

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