Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET
Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET uses trench technology to provide excellent RDS(ON) with a low gate charge. The device can be used in various applications.
Features
VDS =100V, lD =10A
RDS(ON), < 130mΩ @ VGS=10V (Typ:95mΩ)
RDS(ON) < 140mΩ @ VGS=4.5V (Typ:100mΩ)
High-density cell design for ultra-low RDS(ON)
Fully characterized avalanche voltage and current
Good stability and uniformity with high EaS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Applications
Power switching application
Hard switched and high-frequency circuits
Uninterruptible power supply
Halogen-free
P/N suffix V means AEC-Q101 qualified, e.g: RM10N100LDV
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Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET
