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Rectron RM2312 N-Channel Enhancement Mode Power MOSFET

Rectron RM2312 N-Channel Enhancement Mode Power MOSFET uses advanced trench technology to provide excellent RDS(ON). The MOSFET features a low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as battery protection or in other switching applications.

Features

  • VDS = 20V, ID 4.5A
  • RDS(ON) < 45mΩ @ VGS=1.8V
  • RDS(ON) < 40mΩ @ VGS=2.5V
  • RDS(ON) < 33mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead-free product is acquired
  • Surface mount package

Applications

  • Battery protection
  • Load switch
  • Power management
  • Package 3K/Reel, 9K/Box, 72K/Carton
  • Halogen-free
  • P/N suffix V means AEC-Q101 qualified, e.g.: RM2312V

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Rectron RM2312 N-Channel Enhancement Mode Power MOSFET