Diotec Semiconductor DIxxNxx-PQ N-Channel Power MOSFETs

Diotec Semiconductor DIxxNxx-PQ N-Channel Power MOSFETs are packaged in a compact 5mm x 6mm Power QFN package and operate in a -55°C to +150°C junction temperature range. At nominal 80A to 110A and 40V/60V/100V, these MOSFETs feature low on-state resistance, fast switching times, and low thermal resistance. The low gate threshold voltage allows for the logic level drive, while its very low gate charge and output charge reduce power losses and improve overall efficiency. Commercial, industrial, and automotive application uses include DC-DC converters, synchronous rectifiers, power tools, and more. The suffix -AQ stands for fully AEC-Q101 qualified parts.

Features

Logic-level gate drive
Low profile and space-saving package
Low on-state resistance
Fast switching times
Low gate charge

Low thermal resistance
Avalanche rated
Compliant with RoHS, REACH, and Conflict Minerals
AECQ101 qualified

Specifications

40V, 60V or 100V drain-source voltage (V_DSS)
100A continuous drain current (I_D)
3.5mR typical on-state resistance (R_DSon)
1µA drain-source leakage current (I_DSS)
±20V continuos gate-source-voltage (V_GSS)
50W power dissipation (P_tot)
>480A peak drain current (I_DM)

>90A continuous source current (I_S)
480A peak source current (I_SM)
144mJ single pulse avalanche energy (E_AS)
<2.5K/W thermal resistance (R_thC)
-55°C to +150°C operating junction temperature range (T_j)
5mm x 6mm Power QFN package

Applications

DC-DC converters
Power supplies
DC drives

Power tools
Synchronous rectifiers
Battery chargers

Diotec Semiconductor DIxxNxx-PQ N-Channel Power MOSFETs

Features

Specifications

Applications

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