Diotec Semiconductor SICW20C120 Silicon Carbide Schottky Diodes

Diotec Semiconductor SICW20C120 Silicon Carbide Schottky Diodes feature low capacitive charge, high-speed switching, and a high reverse voltage. The SICW20C120 diodes offer a <1.8V forward voltage and a 1200V repetitive peak reverse voltage. The device is ideally suited for high voltage/high-frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies.

The Diotec SICW20C120 diodes supply a -50°C to +175°C junction temperature and are available in a TO-247 package.

Features

High reverse voltage
Almost zero switching losses
Low reverse leakage current

High-efficiency high-frequency switching
Dual diode in industry-standard case outline

Applications

Charging systems for electric vehicles (EV)
Solar inverters

Telecom power supplies
Power Factor Correction (PFC)

Specifications

2x 10 = 20A average forward current (I_FAV)
1200V repetitive reverse voltage (V_RRM)
2.0V typical forward voltage at 10A and +175°C (V_F)

40µA typical reverse leakage at 1200V and +175°C (I_R)
41nC total capacitive charge at 800V, 10A, 200A/µs (Q_C)
TO-247 case outline

Diotec Semiconductor SICW20C120 Silicon Carbide Schottky Diodes

Features

Applications

Specifications

Typical Application

Dimensions mm

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