onsemi NTBG1000N170M1 Silicon Carbide (SiC) MOSFET

onsemi NTBG1000N170M1 Silicon Carbide (SiC) MOSFET is a 1700V M1 planar MOSFET designed with planar technology. This MOSFET features a 960mΩ typical drain-to-source ON resistance (R_DS(ON)), 14nC typical ultra-low gate charge, and 11pF typical low effective output capacitance. The NTBG1000N170M1 SiC MOSFET offers optimum performance when driven with a 20V gate drive and works well with an 18V gate drive. This MOSFET is 100% Avalanche tested and RoHS compliant device. The NTBG1000N170M1 SiC MOSFET is used in electric vehicle charging stations, electric storage systems, Switch Mode Power Supplies (SMPS), and Uninterruptible Power Supplies (UPS).

Features

960mΩ typical drain-to-source ON resistance (R_DS(ON))
14nC typical ultra-low gate charge (Q_G(tot))
11pF typical low effective output capacitance (C_OSS)
1700V drain-to-source voltage (V_DSS)
Power dissipation (Note 2):
- 51W @T_C=25°C
- 25W @T_C=100°C

3.2V typical gate threshold voltage (V_GS(TH))
150pF input capacitance (C_ISS)
5.7Ω typical gate resistance (R_G)
4.2V typical forward diode voltage (V_SD)
100% Avalanche tested
RoHS compliant
D²PAK7 (TO−263−7L HV) package

Applications

Charging stations
Solar inverters
Electric storage systems

Switch Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)

onsemi NTBG1000N170M1 Silicon Carbide (SiC) MOSFET

Features

Applications

Transfer Characteristics

Diode Forward Voltage vs Current

Package Dimensions

husseinkey ELECTRONICS®

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