onsemi NTHL1000N170M1 Silicon Carbide (SiC) MOSFET

onsemi NTHL1000N170M1 Silicon Carbide (SiC) MOSFET is a family of 1700V M1 planar SiC MOSFETs optimized for fast switching applications. This MOSFET planar technology turns off spikes on the gate and works reliably with a negative gate voltage drive. The NTHL1000N170M1 MOSFET offers optimum performance when driven with a 20V gate drive. This MOSFET features a 14nC typical ultra-low gate charge, 11pF typical low effective output capacitance, and 48W power dissipation. The NTHL1000N170M1 MOSFET operates at -55°C to 175°C temperature range and is 100% avalanche tested, RoHS compliant. This MOSFET is ideally used in industries, solar inverters, electric vehicle charging stations, and electric storing systems.