onsemi NTHL022N120M3S EliteSiC Silicon Carbide MOSFET

onsemi NTHL022N120M3S EliteSiC Silicon Carbide MOSFET is a 1200V, M3S, planar device optimized for fast switching applications. Planar technology reliably works with a negative gate voltage drive and turn off spikes on the gate. NTHL022N120M3S offers optimum performance when driven with an 18V gate drive (also works with a 15V gate drive). Available in a TO-247-3L package, the NTHL022N120M3S is ideal for industrial, UPS/ESS, solar, and EV charger applications.

Features

Excellent FOM
Ultra-low ate charge
High-speed switching with low capacitance
15V to 18V gate drive
N-channel

Enhancement mode
M3S technology
Through-hole mount, TO-247-3L package style
100% avalanche tested
Halogen-free and RoHS compliant

Applications

Industrial
UPS/ESS

Solar
EV chargers

Specifications

12kV drain-source breakdown voltage
68A continuous drain current
30mΩ on-drain-source resistance
-10V or +22V gate-source voltage
4.4V gate-source threshold voltage
139nC gate charge
-55°C to +175°C operating temperature range

352W power dissipation
14ns fall time
50ns rise time
34S forward transconductance
Typical delay time
- 44ns turn-off
- 19ns turn-on

onsemi NTHL022N120M3S EliteSiC Silicon Carbide MOSFET

Features

Applications

Specifications

husseinkey ELECTRONICS®

COMPANY