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PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs

PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs utilize Trench technology to improve the product characteristics. These MOSFETs feature low drain-source on resistance and 80V drain-source voltage. The PSMxN08NS1 MOSFETs are 100% avalanche-tested, 100% Rg-tested, and lead-free in compliance with EU RoHS 2.0. These MOSFETs are ideal for use in Battery Management Systems (BMSs), Brushless Direct Current (BLDC) motors, SMPS, and telecommunications power systems.

Features

  • 100% Avalanche tested
  • 100% Rg tested
  • Lead-free in compliance with EU RoHS 2.0
  • Green molding compound as per IEC 61249 standard
  • 80V drain-source voltage
  • Terminals:
    • Solderable per MIL-STD-750, Method 2026

Applications

  • Battery Management System (BMS)
  • Brushless Direct Current (BLDC)
  • Switch Mode Power Supply (SMPS)
  • Telecommunications power systems

Package Dimensions

Mechanical Drawing - PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs

Mechanical Drawing - PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs

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PANJIT PSMxN08NS1 N-Channel Enhancement Mode MOSFETs