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onsemi NDSH40120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH40120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability than Silicon. The onsemi diode has no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Features

  • Max junction temperature 175°C
  • Avalanche rated 166mJ
  • High surge current capacity
  • Positive temperature coefficient
  • Ease of paralleling
  • No reverse recovery/no forward recovery
  • This device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)

Applications

  • General purpose
  • SMPS, solar inverter, UPS
  • Power switching circuits

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onsemi NDSH40120CDN Silicon Carbide (SiC) Schottky Diode