onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET

onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability than silicon. The onsemi MOSFET features low ON resistance and a compact chip size to ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.  

Features

  • Typ. RDS(on) = 20mΩ @ VGS = 15V
  • Typ. RDS(on) = 16mΩ @ VGS = 18V
  • Ultra-low gate charge (QG(tot) = 196nC)
  • Low effective output capacitance (Coss = 296pF)
  • 100% UIL tested
  • This device is Halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)

Applications

  • UPS
  • DC-DC converter
  • Boost inverter

Application Circuit

Application Circuit Diagram - onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET

onsemi NTH4L020N090SC1 Silicon Carbide (SiC) MOSFET