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onsemi NTBG028N170M1 1700V Silicon Carbide (SiC) MOSFET

onsemi NTBG028N170M1 1700V Silicon Carbide (SiC) MOSFET are optimized for fast-switching applications. The onsemi MOSFETs feature Planar technology that works reliably with negative gate voltage drives and turn off spikes on the gate. This family has optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive.    

Features

  • Typ. RDS(on) = 28mΩ
  • Ultra-low gate charge (typ. QG(tot) = 222nC)
  • Low effective output capacitance (typ. Coss = 200pF)
  • 100% avalanche tested
  • RoHS compliant

Applications

  • UPS
  • DC/DC converter
  • Boost converter

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onsemi NTBG028N170M1 1700V Silicon Carbide (SiC) MOSFET