Infineon Technologies 1200V Common Emitter IGBT Modules

Infineon Technologies 1200V Common Emitter IGBT Modules are part of the TRENCHSTOP™ IGBT7 portfolio that combines a 600A or 800A common emitter with low saturation and a fast trench IGBT module with an emitter-controlled diode. The 1200V Common Emitter IGBT Modules provide higher current capability in existing packages, allowing an increase in inverter output power with the same frame size. The Infineon 1200V Common Emitter IGBT Modules supply high power density, reliability, and flexibility, prepared for three-level configuration.

Features

  • Highest power density
  • Best-in-class VCEsat
  • Tvj op = +175°C overload
  • High creepage and clearance distances
  • Isolated base plate
  • Standard housing
  • RoHS compliant
  • 4kVAC insulation for 1 minute
  • Package with CTI > 400
  • UL/CSA Certification with UL1557 E83336

Applications

  • Central inverter solutions
  • Energy storage systems
  • EV charging
  • General purpose motor drives – variating frequency/voltage
  • Uninterruptible Power Supplies (UPS)

Typical Application

Application Circuit Diagram - Infineon Technologies 1200V Common Emitter IGBT Modules

Videos

Infineon Technologies 1200V Common Emitter IGBT Modules