Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with 60V of collector-to-base voltage (VCBO), 40V of collector-to-emitter voltage (VCEO), and 6V of emitter-to-base voltage (VEBO). The MMBT3904T NPN transistor features a collector current of 200mA and a power dissipation (PD) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.

Features

  • Complementary PNP Type: MMBT3906T
  • Epitaxial planar type
  • 60V collector-to-base voltage (VCBO)
  • 40V collector-to-emitter voltage (VCEO)
  • 6V emitter-to-base voltage (VEBO)
  • 200mA collector current (IC)
  • 150mW power dissipation (PD)
  • -55°C to 150°C junction temperature range
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • Consumer electronics
  • Low-frequency amplifiers
  • Drivers

Package Outline Dimensions

Mechanical Drawing - Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor