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onsemi NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs

onsemi NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs. The onsemi NTH4L022N120M3S is optimized for fast-switching applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. These MOSFETs feature optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive.

Features

  • TO-247-4L package with Kelvin source configuration
  • Excellent FOM [ = Rdson * Eoss ]
  • M3S technology 22mohm RDS(ON) with low Eon and Eoff losses
  • 15V to 18V gate drive
  • 100% avalanche tested
  • Halide-free and RoHS compliant

Applications

  • Solar inverters
  • Electric vehicle charging stations
  • Uninterruptible Power Supplies (UPS)
  • Energy storage systems
  • Switch Mode Power Supplies (SMPS)

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onsemi NTH4L022N120M3S Silicon Carbide (SiC) MOSFETs