Diotec Semiconductor Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs are a comprehensive range of MOSFET types, from traditional THT cases via standard SMD packages to the most recent “leadless” QFN and TOLL outlines. Components are available in standard commercial/industrial grading and fully AEC-Q101 qualified options, marked by the suffix -AQ. The MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. Current ratings range from 100mA to 280A, while voltage ranges from 20V to 250V.

Features

Small signal and power MOSFETs
Advanced trench technology
Logic level and standard level drive
N- and P-channel
Fast switching times
Low total gate charge

Low on-state resistance
Single, dual, and H bridge configurations
Enhancement mode options
Surface mount or through-hole options
AEC-Q101 qualified options

Applications

DC/DC converters
Power supplies
DC drives

Power tools
Synchronous rectification
Reverse polarity protection

Specifications

20V to 250V drain-source breakdown voltage range (V_DS)
100mA to 280A continuous drain current range (I_D)
1.4mΩ to 15Ω drain-source resistance range (R_DS-on)
±12V, ±20V, and ±30V gate-source voltage options (V_GS)

400mV to 4V gate-source threshold voltage range (V_GS-th)
440pC to 56C gate charge range (Q_G)
200mW to 425W power dissipation range (P_D)
-55°C to +150°C/+175°C operating temperature ranges

Diotec Semiconductor Advanced Trench Technology Power MOSFETs

Features

Applications

Specifications

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