Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.

Features

N/P-MOSFET in H-Bridge
Low profile, space-saving SO-8 package
Low on-state resistance
Fast switching times

Low gate charge
UL 94V-0 case material
Moisture Sensitivity Level (MSL) 3
Lead-free and RoHS compliant

Applications

DC/DC converters
Power supplies
DC drives

Synchronous rectifiers
Commercial/Industrial grade

Specifications

±20V maximum continuous gate-source voltage
1.5W maximum power dissipation
-55°C to +150°C junction temperature range
<83K/W junction-to-ambient thermal resistance
N-Channel
- Static
  - 30V minimum drain-source breakdown voltage
  - 0.5µA maximum drain-source leakage current
  - ±1000nA maximum gate-body leakage current
  - 1V to 2V gate-source threshold voltage
  - 19mΩ to 26mΩ typical drain-source on-state resistance range, 25mΩ to 40mΩ maximum range
- Dynamic
  - 4S typical forward transconductance
  - 590pF typical input capacitance
  - 122pF typical output capacitance
  - 58pF typical reverse transfer capacitance
  - 11.2ns to 15ns typical turn-off delay/rise time range
  - 8.7ns to 17.5ns typical turn-off delay/fall time range
  - 11.7nC typical total gate charge
  - 1.8nC typical gate-source charge
  - 2.1nC typical gate-drain charge

P-Channel
- Static
  - 30V minimum drain-source breakdown voltage
  - 0.5µA maximum drain-source leakage current
  - ±1000nA maximum gate-body leakage current
  - 1V to 2V gate-source threshold voltage
  - 43mΩ to 68mΩ typical drain-source on-state resistance range, 50mΩ to 80mΩ maximum range
- Dynamic
  - 3.5S typical forward transconductance
  - 631pF typical input capacitance
  - 137pF typical output capacitance
  - 70pF typical reverse transfer capacitance
  - 4.9ns to 7.5ns typical turn-off delay/rise time range
  - 13.5ns to 28.2ns typical turn-off delay/fall time range
  - 11.4nC typical total gate charge
  - 1.8nC typical gate-source charge
  - 2.1nC typical gate-drain charge
Diode
- ±1.2V maximum forward voltage
- 15.1ns to 18.3ns typical reverse recovery time range
- 12nC to 15.3nC reverse recovery charge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Features

Applications

Specifications

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