Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET

Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET offers fast switching times in a SOT-23/TO-236 package. The MMFTP2319 FET features a 40V maximum drain-source voltage, 750mW maximum power dissipation, and a 4.2A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET is ideal for signal processing, battery management, drivers, and logic-level converters.

Features

Fast switching times
Commercial/industrial-grade
UL 94V-0 case material

SOT-23/TO-236 package style
Moisture Sensitivity Level (MSL) 1
Led-free, RoHS and REACH compliant

Applications

Signal processing
Battery management

Drivers
Logic level converters

Specifications

40V maximum drain-source voltage
±20V maximum gate-source voltage
750mW maximum power dissipation
4.2A maximum drain current
30A maximum peak drain current
1µA maximum drain-source leakage current
±100nA maximum gate-source leakage current
1V to 3V gate-source threshold voltage range
80mΩ to 120mΩ maximum drain-source on-state resistance range
1179pF typical input capacitance
82pF typical output capacitance

40pf typical reverse transfer capacitance
15ns to 28ns typical turn-on time range
4ns to 19ns typical turn-off time range
20nC typical total gate charge
4nC typical gate-source charge
2.6nC typical gate-drain charge
4.6Ω typical intrinsic gate resistance
1.2V maximum forward voltage
13.3ns typical reverse recovery time
8.5nC reverse recovery charge
-55°C to +150°C junction temperature range

Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET

Features

Applications

Specifications

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