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Navitas Semiconductor GaN Power ICs (GaNFast™ and GaNSense™) are easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks. The ICs integrate control, drive, sensing, and protection features for all electronic power applications, including travel adaptors, consumer goods, solar inverters, data centers, motor drives, and electric vehicles. Gallium Nitride (GaN) power devices can have extremely high switching speeds, monolithically integrating the driver and power stages. This integration is vital to achieving high switching frequencies while keeping the signal clean and eliminating any unwanted noise affecting the device’s control and reliability. The Navitas GaN Power ICs enable up to 3x faster charging in half the size and weight of old, silicon-based power electronics or 3x more power without a size or weight increase.
NV611x and NV612x GaNFast Power ICs feature an integrated gate drive, wide-range VCC and PWM inputs, internal 2kV ESD protection, and a large thermal cooling pad. These features enable high-frequency operation with ease of use, design flexibility, and compatibility with popular topologies and controllers.
GaNFast Power ICs with GaNSense™ technology (NV613x and NV615x only) include control, drive, sensing, and protection features for high-density charger and adapter applications. An integrated gate drive eliminates parasitic gate loop inductance and prevents gate ringing and glitching. Integrated lossless current sensing eliminates external current sensing resistors to increase system efficiency, reduce PCB footprint, and eliminate RCS hot spots. Real-time over-current (OCP) and over-temperature protection (OTP) circuits provide fast and reliable protection against short-circuit and overload fault conditions, further improving reliability and robustness while increasing energy savings.
