Qorvo QPD1425/QPD1425L GaN RF Power Transistors

Qorvo QPD1425/QPD1425L GaN RF Power Transistors are 375W discrete GaN on SiC HEMTs that operate from DC to 2GHz. The power and efficiency can be optimized under high drain bias operating conditions. Optimization potentially lowers system costs in terms of fewer amplifier line-ups and lower thermal management costs. The Qorvo QPD1425/QPD1425L GaN RF Power Transistors are housed in an industry-standard air cavity package and support both pulsed and CW operation.