onsemi NXH240B120H3Q1x1G Si/SiC Hybrid Modules

onsemi NXH240B120H3Q1x1G Si/SiC Hybrid Power Integrated Modules (PIMs) contain a three-channel 1200V IGBT + SiC Boost module and an NTC thermistor. Each channel consists of a fast-switching 80A IGBT, a 30A SiC diode, a bypass diode, and an IGBT protection diode. Integrated field stop trench IGBTs and SiC diodes provide lower conduction losses and switching losses, enabling high efficiency and superior reliability.

Features

1200V ultra field stop IGBTs
Low reverse recovery and fast switching SiC diodes
Low inductive layout

Press-fit pins/solder pins
Thermistor

Applications

Solar inverters
Environmental Stress Screening (ESS)

Specifications

IGBT (T11, T21, T31)
- 1200V maximum collector-emitter voltage
- ±20V maximum gate-emitter voltage
- 92A maximum continuous collector current
- 276A maximum pulsed collector current
- 266W maximum power dissipation
Protection diode (D11, D21, D31)
- 1200V maximum peak repetitive reverse voltage
- 41A maximum continuous forward current
- 123A maximum repetitive peak forward current
- 54W maximum power dissipation
3000V_RMS maximum isolation test voltage
12.7mm maximum creepage distance

Silicon carbide boost diode (D12, D22, D32)
- 1200V maximum peak repetitive reverse voltage
- 37A maximum continuous forward current
- 111A maximum repetitive peak forward current
- 99W maximum power dissipation
Bypass diode (D13, D23, D33)
- 1200V maximum peak repetitive reverse voltage
- 54A maximum continuous forward current
- 162A maximum repetitive peak forward current
- 64W maximum power dissipation
-40°C to +150°V operating temperature range

onsemi NXH240B120H3Q1x1G Si/SiC Hybrid Modules

Features

Applications

Specifications

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