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Texas Instruments DRV8106-Q1 Automotive Half-Bridge Smart Gate Drivers are capable of driving high-side and low-side N-channel power MOSFETs. The DRV8106-Q1 generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.
The TI DRV8106-Q1 Automotive Half-Bridge Smart Gate Drivers use a smart gate-drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decrease electromagnetic interference (EMI) through the adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.
The DRV8106-Q1 Gate Drivers offer an array of protection features to ensure robust system operation. These features include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent, and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.











