ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs

ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs enable high current handling capability with reduced package resistance. The HSOP-8 and HSMT-8 packaged components provide simultaneous low ON-resistance and gate charge capacitance, minimizing energy loss. Operating within a -55°C to +150°C temperature range, these MOSFETs are ideal for drive applications that operate on 24V/36V/48V power supplies.

Features

Utilizes a Cu clip package that enables high current handling capability with reduced package resistance
Simultaneous low ON-resistance and gate charge capacitance (trade-off relationship) minimizes energy loss
Offered in the compact 3333 and 5060 package sizes (HSOP-8 and HSMT-8 case styles)

40V/60V/80V/100V/150V breakdown voltages (24V/36V/48V input with spikes and noise margins considered)
Ideal for drive applications that operate on 24V/36V/48V power supplies

Applications

Power supplies
- Servers
- Base stations

Motor-driven equipment
- Industrial
- Consumer

Specifications

40V to 150V Drain-source breakdown range
25A to 210A Continuous drain current range
1.34mΩ to 73mΩ Drain-source resistance range
±20V Gate-source range

2.5V or 4V Gate-source threshold range
16.7nC to 67nC Gate charge range
-55°C to +150°C Operating temperature range
59W to 104W Power dissipation range

COMPANY

ROHM Semiconductor RS6/RH6 Cu-Clip Package N-Channel Power MOSFETs

Features

Applications

Specifications

Videos

Structure Comparison

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