Infineon Technologies EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.

Features

Best-in-class package, 62.8mm x 33.8mm x 12mm in dimension (LxWxH)
Combination of leading-edge WBG material and Easy module packages
Very low module stray inductance
Wide RBSOA
1200V CoolSiC MOSFET with enhanced generation 1 trench technology
Enlarged recommended gate drive voltage windows of 0 to 5V and +15V to +18V
Extended maximum gate-source voltages of +23V and -10V
17mΩ or 33mΩ drain source on resistance options

T_vjop under overload conditions up to +175°C
PressFIT pins
Integrated NTC temperature sensor
Thermal interface material (xHP_B11 variants)
Integrated mounting clamps
Enables higher frequency to increase power density
Outstanding module efficiency and a best cost-performance ratio enable reduced system costs
System efficiency improvement for reduced cooling requirements
RoHS compliant

Applications

High-frequency switching applications
DC/DC converters
UPS systems

DC chargers for EV (FF17MR12W1M1Hx variants)
Motor drives (F33MR12W1M1Hx variants)

Infineon Technologies EasyDUAL™ 1B IGBT Modules

Features

Applications

Diagrams

husseinkey ELECTRONICS®

COMPANY