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Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

Features

  • VCE = 650V
  • IC = up to 150A
  • Low switching losses
  • Very low collector-emitter saturation voltage VCEsat
  • Very soft, fast recovery antiparallel diode
  • Smooth switching behavior
  • Humidity robustness
  • Optimized for hard switching, two- and three-level topologies

Applications

  • Industrial UPS
  • EV-charging
  • String inverters
  • Welding

Overview

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

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Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors