NXP Semiconductors A5M35TG140-TC Airfast Power Amplifier Module

NXP Semiconductors A5M35TG140-TC Airfast Power Amplifier Module is a fully integrated Doherty amplifier module that operates at a 3400MHz to 3600MHz carrier center frequency range. This amplifier module is designed for wireless infrastructure applications that demand high performance in a small footprint. The A5M35TG140-TCT1 amplifier module features a 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier. This power amplifier module also features a 10.5W average power output, 30dB gain, 225°C maximum channel temperature, and 28dBm peak input power. The A5M35TG140-TCT1 amplifier module provides reduced memory effects for improved linearized error vector magnitude. This amplifier module is used in outdoor small cells, massive MIMO systems, and low-power remote radio heads.

Features

2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
Thermal path is separated from the electrical/solder connection path for enhanced thermal dissipation
Fully matched (50Ω input/output, DC blocked)

Designed for low-complexity digital linearization systems
Reduced memory effects for improved linearized error vector magnitude
14mm x 10mm dimension

Applications

Outdoor small cells
Massive MIMO systems
Low-power remote radio heads

Specifications

3410MHz carrier center frequency
- 30.5dB gain
- -27.6dBc ACPR
- 46.7% PAE
3500MHz carrier center frequency
- 30.5dB gain
- -30.2dBc ACPR
- 47.5% PAE
3590MHz carrier center frequency
- 30.4dB gain
- -32.8dBc ACPR
- 47.9% PAE

Operating voltage range
- 4.75V_DC to 5.25V_DC (V_DD1)
- 38V_DC to 55V_DC (V_DD2)
225°C maximum channel temperature
125°C case operating temperature
28dBm peak input power
10.5W average power output

NXP Semiconductors A5M35TG140-TC Airfast Power Amplifier Module

Features

Applications

Specifications

Functional Electrical Routing Diagram

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