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Infineon Technologies 2000V CoolSiC™ MOSFETs

Infineon Technologies 2000V CoolSiC™ MOSFETs are trench MOSFETs in a TO-247PLUS-4-HCC package. These MOSFETs are designed to deliver increased power density without sacrificing the system’s reliability, even under demanding high-voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability using the .XT interconnection technology and enable top efficiencies in various applications. The 2000V MOSFETs feature a benchmark gate threshold voltage of 4.5V and offer very-low switching losses. Typical applications include energy storage systems, EV charging, string inverter, and solar power optimizer.

Features

  • High power density
  • Very low switching losses
  • .XT interconnection technology for best-in-class thermal performance
  • Excellent reliability
  • High efficiency
  • Improved humidity robustness 
  • Robust body diode for hard commutation
  • Ease of design

Specifications

  • THT mounting
  • 4 pins
  • 2000V VDSS for high DC-link systems up to 1500VDC
  • 4.5V benchmark gate threshold voltage
  • Innovative HCC package with 14mm creepage and 5.5mm clearance distances
  • -55°C  to 175°C operating temperature range
  • 175°C operating junction temperature

Applications

  • Energy storage systems
  • EV charging
  • String inverter
  • Solar power optimizer

Videos

Pin Diagram

Infineon Technologies 2000V CoolSiC™ MOSFETs

Package Outlines

Mechanical Drawing - Infineon Technologies 2000V CoolSiC™ MOSFETs

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Infineon Technologies 2000V CoolSiC™ MOSFETs