Nexperia NGW30T60M3DF Trench Field-Stop Insulated-Gate Bipolar Transistor (IGBT) features third-generation technology and combines carrier-stored trench-gate and field-stop (FS) structures. Rated up to +175°C, the IGBT offers optimized IGBT turn-off losses with a 5μs short circuit withstand time. This hard-switching 600V, 30A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.
The Nexperia NGW30T60M3DF Trench Field-Stop IGBT is offered in a single-ended, through-hole, 3-lead TO-247-3L package. This device is RoHS-compliant with lead-free plating.









