onsemi FGH4L50T65SQD 650V 50A High-Speed IGBT

onsemi FGH4L50T65SQD 650V 50A High-Speed IGBT uses novel field stop IGBT technology in this series of 4th-generation IGBTs. These devices offer the optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications. The onsemi FGH4L50T65SQD is ideal where low conduction and switching losses are essential.

Features

  • Maximum junction temperature (TJ) is 175°C
  • Positive temperature coefficient for easy parallel operating
  • High current capability
  • Low saturation voltage (VCE(Sat)) of 1.6V (Typ.) @ IC = 50A
  • 100% of the parts are tested for ILM
  • High input impedance
  • Fast switching
  • Tight parameter distribution
  • This device is Pb−Free and is RoHS compliant

Applications

  • Solar inverter
  • UPS
  • Welder
  • Telecom
  • ESS
  • PFC

Circuit Diagram

Schematic - onsemi FGH4L50T65SQD 650V 50A High-Speed IGBT

onsemi FGH4L50T65SQD 650V 50A High-Speed IGBT