Toshiba DF2BxM4ASL ESD Protection Diodes

Toshiba DF2BxM4ASL ESD Protection Diodes protect semiconductor devices like mobile device interfaces and other applications against static electricity and noise. These ESD protection diodes utilize snapback characteristics and provide low dynamic resistance and superior protective performance. The DF2BxM4ASL diodes optimum the high-speed signal application for low capacitance performance. These ESD protection diodes are stored at -55°C to 150°C temperature range. The DF2BxM4ASL diodes function at 150°C junction temperature, 30W peak pulse power, and 2A peak pulse current. Typical applications include smartphones, tablets, notebook PCs, and desktop PCs.

Features

Compact package suits the use in high-density board layouts such as in mobile devices
Low dynamic resistance protects semiconductor devices from static electricity and noise

Snapback characteristics realizing low clamping voltage protects semiconductor devices
Protects devices with its high ESD performance

Specifications

DF2B5M4ASL:
- 3.6V working peak reverse voltage
- 4V to 6V holding voltage range
DF2B6M4ASL:
- 5.5V working peak reverse voltage
- 5.6V to 8V holding voltage range

-55°C to 150°C storage temperature range
150°C junction temperature
30W peak pulse power
2A peak pulse current

Applications

Mobile equipment:
- Smartphones
- Tablets
- Notebook PCs

Desktop PCs

Toshiba DF2BxM4ASL ESD Protection Diodes

Features

Specifications

Applications

Circuit Diagram

husseinkey ELECTRONICS®

COMPANY