Coherent TM3B0020120 1200V SIC MOSFET

Coherent TM3B0020120 1200V SIC MOSFET features improved efficiency and higher switching frequency than standard devices, with an outstanding +200°C rating. The TM3B0020120 implements fast switching via an ultra-low gate resistance. Additionally, the Coherent TM3B0020120 provides very low-temperature invariant switching losses.

Features

High voltage and low R_DS(ON) up to +200°C
Fast switching enabled by ultra-low gate resistance
Very low, temperature invariant switching losses

Avalanche ruggedness superior to silicon
Fast recovery body diode for synchronous rectification

Specifications

Continuous drain current
- 108A at V_GS = 20V, T_C = +25°C
- 82A at V_GS = 20V, T_C = +100°C
- 71A at V_GS = 20V, T_C = +125°C

120A Pulsed drain current
473W Power dissipation
1200V Drain source breakdown voltage
-55°C to +200°C Operating junction and storage temperature

Typical Application

Application Circuit Diagram - Coherent TM3B0020120 1200V SIC MOSFET

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