onsemi NIV1x ESD Suppressors / TVS Diodes

onsemi NIV1x ESD Suppressors / TVS Diodes are designed to protect high-speed data lines from ESD as well as short to vehicle battery situations. These diodes feature ultra-low capacitance and low ESD clamping voltage. The NIV1x diodes are an ideal solution for protecting voltage-sensitive high-speed data lines while the low RDS(on) FET limits distortion on the signal lines. These diodes include short-to-battery blocking and short-to-USB VBUS blocking integrated MOSFETs. The NIV1x ESD suppressors operate at -55°C to 150°C temperature range, 30V drain to source voltage, and ±10V gate to source voltage. These diodes are ideal for use automotive high-speed signal pairs, USB 2.0, and Low-Voltage Differential Signaling (LVDS).

Features

  • Low capacitance
  • Integrated MOSFETs:
    • Short to battery blocking
    • Short to USB VBUS blocking
  • Wettable flanks device for optimal Automated Optical Inspection (AOI)
  • Qualified and PPAP capable
  • Pb free, halogen-free/BFR free, and RoHS compliance
  • NIV prefix for automotive and other applications that require unique site and control change requirements

Specifications

  • NIV1161x:
    • 0.65pF capacitance
    • 16V reverse working voltage
    • 1μA reverse leakage current
  • NIV1241:
    • 0.66pF capacitance
    • 23.5V reverse working voltage
    • 0.5μA reverse leakage current
  • -55°C to 150°C operating and storage temperature range
  • 30V drain to source voltage
  • ±10V gate to source voltage

Applications

  • Automotive high-speed signal pairs
  • USB 2.0
  • LVDS

Location Circuit

Location Circuit - onsemi NIV1x ESD Suppressors / TVS Diodes

onsemi NIV1x ESD Suppressors / TVS Diodes