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onsemi NSV40301MZ4 Bipolar Power Transistor

onsemi NSV40301MZ4 Bipolar Power Transistor is a combination of low saturation voltage and high gain low VCE(sat) NPN transistor. This bipolar transistor features a 40VDC collector-emitter voltage, 1ADC base current, and -55°C to 150°C operating and storage Junction temperature range. The NSV40301MZ4 bipolar power transistor is Pb, Halogen/BFR free, and RoHS compliant. Typical applications include voltage regulation, power management for portable devices, switching regulators, motor controls, and DC-DC converters.

Features

  • Low collector-emitter saturation voltage
  • High DC current gain
  • High current-gain bandwidth product
  • NSV prefix for automotive and other applications requiring unique site and control change requirements:
    • AEC-Q101 qualified
    • PPAP capable
  • NSS40300MZ4 is a PNP complimentary device
  • PbFree
  • Halogen/BFR-free
  • RoHS compliant

Specifications

  • 40VDC collector-emitter voltage
  • 40VDC collector-base voltage
  • 6VDC emitter-base voltage
  • 1ADC continuous base current
  • 3ADC continuous collector current
  • 5ADC peak collector current
  • -55°C to 150°C operating and storage junction temperature range

Applications

  • Voltage regulation
  • Power management for portable devices
  • Switching regulators
  • Motor controls
  • DC-DC converters

Dimension Diagram

Mechanical Drawing - onsemi NSV40301MZ4 Bipolar Power Transistor

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onsemi NSV40301MZ4 Bipolar Power Transistor