Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an R_DS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.

Features

Revolutionary Silicon Carbide semiconductor material
Very low switching losses
Increased turn-on voltage V_GS(on) of 20V
IGBT-compatible driving voltage
0V turn-off gate voltage
Benchmark gate threshold voltage of V_GS(the) = 4.5V
Best-in-class switching energy
Low device capacitances
Threshold-free on-state characteristic
Temperature-independent turn-off switching losses

.XT die attach technology for best-in-class thermal performance
Fully controllable dv/dt
Sense pin for optimized switching performance
Suitable for HV creepage requirements
Thin leads for reduced risk of solder bridges
Commutation robust body diode, ready for synchronous rectification
-55°C to +175°C operating temperature range
Lead-free, Halogen-free, and RoHS-compliant

Applications

Onboard chargers and PFCs
Boosters and DC/DC converter
Auxiliary inverters

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Features

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