onsemi NVHL070N120M3S EliteSiC Automotive SiC MOSFET

onsemi NVHL070N120M3S EliteSiC Automotive Silicone Carbide (SiC) MOSFET is a 1200V M3S planar device optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This device delivers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.

Features

Ultra-low gate charge
High-speed switching with low capacitance
TO-247-3L package
100% Avalanche tested

AEC−Q101 qualified and PPAP capable
Halide-free and RoHS compliant with exemption 7a, lead-free 2LI (on second level interconnection)

Applications

Automotive onboard chargers
Automotive DC-DC converters for EV/HEV

Specifications

Off-state
- 1200V minimum drain-to-source breakdown voltage
- 0.3V/°C typical drain-to-source breakdown voltage temperature coefficient
- 100µA maximum zero gate voltage drain current
- ±1µA maximum gate-to-source leakage current
On-state
- 2.04V to 4.4V gate threshold voltage
- -3V to 18V recommended gate voltage range
- 65mΩ to 136mΩ typical drain-to-source on resistance
- 12S forward transconductance
Charges, capacitances, and gate resistance
- 1230pF typical input capacitance
- 57pF typical output capacitance
- 5pF typical reverse transfer capacitance
- 57nC typical total gate charge
- 3.2nC typical threshold gate charge
- 9.6nC typical gate-to-source charge
- 17nC typical gate-to-drain charge
- 4.3Ω typical gate-resistance

Switching
- 10ns typical turn-on delay time
- 24ns typical rise time
- 29ns typical turn-off delay time
- 9.6ns typical fall time
- 254µJ typical turn-on switching loss
- 46µJ typical turn-off switching loss
- 300µJ typical total switching loss
Source-drain diode
- 31A maximum continuous forward current
- 98A maximum pulsed forward current
- 4.7V typical forward diode voltage
- 14ns typical reverse recovery time
- 57nC typical reverse recovery charge
- 3.1µJ typical reverse recovery energy
- 8.2A typical peak reverse recovery current
- 7.7ns typical charge time
- 6.2ns typical discharge time
Maximum thermal resistance
- 0.94°C/W junction-to-case
- 40°C/W junction-to-ambient
-55°C to +175°C operating junction temperature range

onsemi NVHL070N120M3S EliteSiC Automotive SiC MOSFET

Features

Applications

Specifications

Schematic

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