onsemi NDSH30120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH30120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH30120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.

Features

+175°C maximum junction temperature
196mJ Avalanche rated, single pulse
High surge current capacity
Positive temperature coefficient

Ease of paralleling
No reverse/forward recovery
TO-247-2LD case
Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

General purpose
Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
Power switching circuits

Specifications

1200V maximum peak repetitive reverse voltage
30A to 38A maximum continuous rectified forward current range
Maximum forward surge current
- 994A to 1078A non-repetitive peak range
- 161A non-repetitive
- 57A repetitive
Maximum power dissipation
- 333W at +25°C
- 56W at +150°C
1.41V to 1.97V typical forward voltage range

200µA maximum reverse current
132nC typical total capacitive charge
88pF (at 800V) to 1961pF (at 1V) typical total capacitance range
Maximum thermal resistance
- 0.45°C/W junction-to-case
- 40°C/W junction-to-ambient
-55°C to +175°C operating temperature range

onsemi NDSH30120C-F155 Silicon Carbide Schottky Diode

Features

Applications

Specifications

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