onsemi NDSH20120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH20120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH20120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.

Features

+175°C maximum junction temperature
166mJ Avalanche rated, single pulse
High surge current capacity
Positive temperature coefficient

Ease of paralleling
No reverse/forward recovery
TO-247-2LD case
Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

General purpose
Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
Power switching circuits

Specifications

1200V maximum peak repetitive reverse voltage
20A to 26A maximum continuous rectified forward current range
Maximum forward surge current
- 854A to 896A non-repetitive peak range
- 119A non-repetitive
- 40A repetitive
Maximum power dissipation
- 214W at +25°C
- 35W at +150°C

1.38V to 1.87V typical forward voltage range
200µA maximum reverse current
100nC typical total capacitive charge
58pF (at 800V) to 1480pF (at 1V) typical total capacitance range
Maximum thermal resistance
- 0.7°C/W junction-to-case
- 40°C/W junction-to-ambient
-55°C to +175°C operating temperature range

onsemi NDSH20120C-F155 Silicon Carbide Schottky Diode

Features

Applications

Specifications

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