onsemi NDSH10120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH10120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The EliteSiC NDSH10120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.

Features

+175°C maximum junction temperature
49mJ Avalanche rated, single pulse
High surge current capacity
Positive temperature coefficient

Ease of paralleling
No reverse/forward recovery
TO-247-2LD case
Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

General purpose
Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
Power switching circuits

Specifications

1200V maximum peak repetitive reverse voltage
10A to 12A maximum continuous rectified forward current range
Maximum forward surge current
- 459A to 546A non-repetitive peak range
- 59A non-repetitive
- 31A repetitive
Maximum power dissipation
- 94W at +25°C
- 16W at +150°C

1.39V to 1.94V typical forward voltage range
200µA maximum reverse current
46nC typical total capacitive charge
32pF (at 800V) to 680pF (at 1V) typical total capacitance range
Maximum thermal resistance
- 1.6°C/W junction-to-case
- 40°C/W junction-to-ambient
-55°C to +175°C operating temperature range

onsemi NDSH10120C-F155 Silicon Carbide Schottky Diode

Features

Applications

Specifications

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