onsemi NDSH30120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH30120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability than Silicon in a TO-247-3LD package. NDSH30120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and and high surge current capacity.

Features

+175°C maximum junction temperature
110mJ Avalanche-rated, single-pulse
High surge current capacity
Positive temperature coefficient
Ease of paralleling

No reverse/forward recovery
TO-247-3LD case
Halide-free and RoHS-compliant with exemption 7a, lead-free 2LI (on second level interconnection)

Applications

General purpose
Switch-mode power supplies (SMPS), solar inverters, and uninterruptible power supplies (UPS)
Power switching circuits

Specifications

1200V maximum peak repetitive reverse voltage
Maximum continuous rectified forward current range
- 30A to 38A per device
- 15A to 19A per leg
Maximum forward surge current
- 735A to 749A non-repetitive peak range
- 91A non-repetitive
- 39A repetitive
Maximum power dissipation
- 158W at +25°C
- 26W at +150°C

1.40V to 1.98V typical forward voltage range
200µA maximum reverse current
64nC typical total capacitive charge
44pF (at 800V) to 927pF (at 1V) typical total capacitance range
Maximum thermal resistance
- 0.46°C/W junction-to-case per device
- 0.95°C/W junction-to-case per leg
- 40°C/W junction-to-ambient
-55°C to +175°C operating temperature range

onsemi NDSH30120CDN Silicon Carbide (SiC) Schottky Diode

Features

Applications

Specifications

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