onsemi NVBG1000N170M1 Silicon Carbide (SiC) MOSFET

onsemi NVBG1000N170M1 Silicon Carbide (SiC) MOSFET is a 1700V M1 planar device optimized for fast switching applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. This N-channel ElteSiC MOSFET delivers optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive.

Features

960mΩ drain-source on-resistance when the gate-to-source voltage is 20V
Ultra-low gate charge of 14nc
High-speed switching with a low capacitance of 11pF
N-channel
100% Avalanche tested

AEC−Q101 qualified and PPAP-capable
D2PAK-7L case
Halide-free and RoHS-compliant with exemption 7a, lead-free 2LI (on second level interconnection)

Applications

Flyback converters
Automotive EV/HEV

Specifications

1700 maximum drain-to-source voltage
-15V/+25V maximum gate-to-source voltage, -5V/+20V recommended operating values
3.0A (at +100°C) to 4.3A (at +25°C) maximum continuous drain current range
25W (at +100°C) to 51W (at +25°C) maximum power dissipation range

14.6A maximum pulsed drain current
10A maximum source current (body diode)
24mJ maximum single pulse drain-to-source Avalanche energy
-55°C to +175°C operating junction temperature range
+270°C maximum soldering temperature

husseinkey ELECTRONICS®

COMPANY