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Infineon Technologies EiceDRIVER™ 2EDB Gate-Driver ICs include the 2EDB8259F and 2EDBx259Y, designed to drive Si and SiC MOSFETs and GaN HEMT power switches. The family of dual-channel isolated gate-driver ICs are offered in a DSO package with 4mm input-to-output creepage and facilitates primary isolation employing on-chip coreless transformer (CT) technology. The 2EDBx279Y variants in a 14-pin DSO package offer increased channel-to-channel creepage. The devices are suited for use in applications with higher bus voltage or pollution degrees and generally can ease PCB routing.
The Infineon EiceDRIVER 2EDB Gate-Driver ICs offer optional shoot-through protection (STP) and dead-time control (DTC) functionality. This functionality allows the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead time. With excellent common-mode transient immunity (CMTI), low part-to-part skew, and fast signal propagation, the components are ideal for use in fast-switching power conversion systems.
