Infineon Technologies CoolSiC™ 1200V G2 MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 MOSFETs are a high-performance solution for power electronics applications. Infineon Technologies G2 MOSFETs have a voltage rating of 1200V at 25°C, an I_DDC of 6.2A at +100°C, and an R_DS(on) of 233.9mΩ at 18V gate-source voltage. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The MOSFETs are designed for overload conditions, supporting operation up to +200°C, and can withstand short circuits for up to 2µs. Notably, the devices feature a benchmark gate threshold voltage V_GS(th) of 4.2V, ensuring precise control.

Features

V_DSS = 1200V at T_vj = +25°C
I_DDC = 6.2A at T_C = +100°C
R_DS(on) = 233.9mΩ at V_GS = 18V, T_vj = +25°C
Very low switching losses
Overload operation up to T_vj = +200°C
Short circuit withstand time of 2µs

Benchmark gate threshold voltage, V_GS(th) = 4.2V
Robust against parasitic turn-on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance

Applications

EV-charging
Online UPS/industrial UPS
Solar power optimizers

String inverters
General purpose drives (GPD)

Infineon Technologies CoolSiC™ 1200V G2 MOSFETs

Features

Applications

Diagram

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