onsemi NVMFS5C604N Single N-Channel Power MOSFET

onsemi NVMFS5C604N Single N-Channel Power MOSFET features a 288A continuous drain current, 1.2mΩ at 10V R_DS(ON), and 60V drain-to-source voltage. The NVMFS5C604N is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

Small footprint (5mm x 6mm) for compact design
Low R_DS(on) to minimize conduction losses
Low Q_G and capacitance to minimize driver losses

NVMFS5C604NWF – wettable flank option for enhanced optical inspection
AEC-Q101-qualified and PPAP-capable
Pb-free and RoHS-compliant

Applications

Reverse battery protection
Switching power supplies

Power switches (high-side driver, low-side driver, H-bridges, etc)

Specifications

288A maximum continuous drain current
1.2mΩ at 10V R_DS(ON) maximum
60V Drain-to-Source voltage
±20V Gate-to-Source voltage

900A pulsed drain current
-55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFS5C604N Single N-Channel Power MOSFET

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