Infineon Technologies Solid State Isolators

Infineon Technologies Solid State Isolators (SSI) provide galvanically isolated gate drives for various MOSFET and IGBT switches in SSR applications. These devices enable the creation of custom solid-state relays capable of controlling loads over 1000V and 100A. The CT-based isolators enable energy transfer across the isolation barrier and can drive large MOSFETs or IGBTs without the added circuitry of a power supply on the isolated side. The innovative protection features enable the design of reliable and robust Solid State Relays.

The SSIs provide powerful energy transmission over a galvanic isolation barrier to drive the gates of MOS-controlled power transistors, such as CoolMOS™, OptiMOS™, CoolSiC™, or TRENCHSTOP™ IGBT. The output side of the solid-state isolator family does not require a dedicated voltage supply to drive the power transistor’s gate. The output side offers advanced control functions such as fast turn-on, fast turn-off, overcurrent protection, and over-temperature protection to easily/safely build up solid-state relays for various applications. This family includes iSSI30R12H, which is tailored for CoolMOS™ S7 T-Sense power MOSFETs offering an integrated temperature sensor. Other parts of the family are for use with external PTC resistors.

Precise protection functions are offered for building cost-effective systems. The input side of the isolator is 3.3V compatible and operates with a supply current of 16mA (typical). The iSSI20R02H, iSSI20R03H, and iSSI20R11H variants come in a DSO-8-66 package while iSSI30R11H and iSSI30R12H come in a DSO-16-33 package.

Features

Solid-state isolators using Infineon’s coreless-transformer technology
No isolated gate bias supply is required for gate driving
Perfect match for CoolMOS, OptiMOS, and TRENCHSTOP IGBTs
Low power, large input voltage range from 2.6V to 3.5V (internally clamped)
High-impedance, CMOS input (buffered variants)
Up to 18V output voltage, no series or parallel configuration required for powerful gate driving
High-output peak currents
- 185µA (direct drive variants)
- 400mA (buffered variants)

Fast turn-on/-off for safe switches’ SOA operation
Up to 5.7kV_RMS galvanic isolation
Temperature sensor and current sensor protection inputs
Latch-off in case of a failure event (overcurrent or over-temperature)
Dynamic Miller clamping protection
Wide-body package with high creepage and clearance for UL 1577 (planned) and reinforced isolation according to IEC 60747-17 (planned)
Minimizes the need for heatsinks
Eliminates spurious contact turn on

Applications

Solid-state relay AC and DC applications
Electromechanical relay replacements
Programmable logic control, industrial automation, and controls

Smart building and home automation systems (thermostat, lighting, heating control)
Instrumentation equipment

Specifications

±1200V maximum input-to-output offset voltage
-10V to 4.25V maximum input supply voltage
-10V to 15V maximum input logic voltage
0mA to 120mA maximum input supply current
200mW maximum power dissipation input part
4.5mW maximum power dissipation output part
2kHz maximum switching frequency
200V/ns maximum common-mode transient immunity

-40°C to +125°C ambient temperature range
-40°C to +150°C junction temperature range
ESD robustness
- 2kV minimum Human Body Model (HBM)
- TC 1000 Charged Device Model (CDM) according to ANSI/ESDA/JEDEC-JS-002-2014 (TC = highest test condition passed according to AEC-Q100-011 Rev D)

Infineon Technologies Solid State Isolators

Features

Applications

Specifications

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