SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.

Features

  • High-speed switching SiC MOSFETs
  • Reliable body diode
  • All parts tested to above 1350V
  • Direct mounting to the heatsink (isolated package)
  • 175°C junction temperature
  • Kelvin reference for stable operation
  • Low switching losses
  • Low junction to case thermal resistance
  • Very rugged and easy mounting
  • RoHS-compliant

Applications

  • Photovoltaic inverter
  • Battery charger
  • Energy storage system
  • High voltage DC-to-DC converter

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules