Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET

Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET is a 250V low-voltage and single configuration MOSFET built with Trench technology. This MOSFET features a 22A continuous drain current, 60mΩ drain-source resistance, 78W power dissipation, and 71nC gate charge. The TSM600NA25CIT MOSFET offers 22pF reverse transfer capacitance and is Pb-free, halogen-free, and RoHS compliant. This power MOSFET is ideally used in Uninterruptible Power Supply (UPS), AC-DC power supply, and lighting applications.

Features

Single configuration and N-channel MOSFET
Trench technology
250V low drain-source voltage (V_DS)
22A continuous drain current (I_D) @ (T_C=25°C)
60mΩ low drain-source resistance (R_DS(ON)) (maximum)
71nC low gate charge (Q_g) (Typical)
22pF low reverse transfer capacitance (C_rss) (Typical)
78W power dissipation (P_d)

-55°C to 150°C operating temperature range
RoHS compliant
Pb-free
Halogen-free
Isolation voltage 2500V/1min
ITO-220TL package

Applications

Uninterruptible Power Supply (UPS)
AC-DC power supply
Lighting

Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET

Features

Applications

Package Outline Dimensions

husseinkey ELECTRONICS®

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