PANJIT PZS52CxM1Q Silicon Zener Diodes

PANJIT PZS52CxM1Q Silicon Zener Diodes feature a planar die construction and are ideal for automated assembly processes. The DFN1006-2L packaged diodes operate within a -55°C to +150°C temperature range and 4.10V to 49.35V maximum nominal zener voltage range. The PANJIT PZS52CxM1Q Silicon Zener Diodes offer 250mW maximum peak pulse power dissipation at +25°C with a 0.9V maximum forward voltage at 10mA.

Features

Planar die construction
Ideally suited for automated assembly processes
DFN1006-2L package

Solderable terminals per MIL-STD-750, Method 2026
Lead-free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard

Specifications

250mW maximum peak pulse power dissipation at +25°C
500°C/W maximum junction-to-ambient typical thermal resistance
0.9V maximum forward voltage at 10mA
4.10V to 19.35V maximum nominal zener voltage range

10Ω to 170Ω maximum nominal zener impedance range
0.1µA to 3.0µA maximum reverse leakage current
-55°C to +150°C operating temperature range

PANJIT PZS52CxM1Q Silicon Zener Diodes

Features

Specifications

Package

husseinkey ELECTRONICS®

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