ISSI IS29GL032 Parallel Flash Memory Devices

ISSI IS29GL032 Parallel Flash Memory devices feature a 256-word MAX program buffer and offer BLANK CHECK operation to verify an erased sector. These memory devices operate at 2.7V to 3.6V V_CC input voltage range and provide program suspend, erase suspend, and resume capability. The IS29GL032 memory devices operate from -40°C to 125°C of the automotive A3 grade temperature range and provide standby mode for low-power consumption. These memory devices are used in embedded applications that require higher density, better performance, and low power consumption.

Features

Supply operation:
- 2.7V to 3.6V V_CCinput voltage range
Asynchronous random or page read:
- 8 words or 16 bytes page size
- 25ns page access
- 70ns random access
Buffer program:
- 256-word MAX program buffer
Program time:
- 0.56µs per byte (1.8MB/s TYP when using 256-word buffer size in buffer program without VHH)
- 0.31µs per byte (3.2MB/s TYP when using 256-word buffer size in buffer program with VHH)
Memory organization:
- 32Mb: 64KB x 64KB (Uniform), or 8KB x 8KB (Top or Bottom Boot)+ 63KB x 64KB
Program/erase suspend and resume capability:
- Program suspend: Read from another sector
- Erase suspend: Read or Program from another sector
BLANK CHECK operation to verify an erased sector
Unlock bypass, sector erase, chip erase, and buffer program capability:
- Fast buffered/batch programming
- Fast sector and chip erase

WP#/ACC pin protection:
- V_HH voltage on WP#/ACC to accelerate programming performance
- Protects highest/lowest sector (H/L uniform) or top/bottom two sectors (T/B boot)
Software protection:
- Advanced Sector Protection (ASP)
Support Common Flash Interface (CFI)
Low power consumption:
- Standby mode
Data retention:
- 20 years (TYP)
100K minimum ERASE cycles per sector
Temperature range:
- -40°C to 105°C extended grade
- -40°C to 125°C automotive A3 grade

ISSI IS29GL032 Parallel Flash Memory Devices

Features

Block Diagram

Pin Diagram

husseinkey ELECTRONICS®

COMPANY