STMicroelectronics EVALSTGAP2HSM Gate Driver Demonstration Board allows evaluating all the STGAP2HSM features while driving a half-bridge power stage with a voltage rating up to 1200V in TO-220 or TO-247 package. The gate driver is characterized by 4A current capability and rail-to-rail outputs. This feature makes the gate driver suitable also for high power inverter applications such as motor drivers in industrial applications equipped with MOSFET / IGBT power switch. The separated source and sink outputs allow the user to independently optimize turn-on and turn-off by using dedicated gate resistors.
The device integrates protection functions, such as UVLO and thermal shutdown, are included to easily design high-reliability systems. Dual input pins allow choosing the control signal polarity and also implementing HW interlocking protection to avoid cross-conduction in case of controller’s malfunction. The device allows implementing negative gate driving, and the onboard isolated DC-DC converters allow working with optimized driving voltage for MOSFET/IGBT. The STMicroelectronics EVALSTGAP2HSM allows for easy selecting and modifying the values of relevant external components to ease driver performance evaluation under different applicative conditions and fine pre-tuning of the final application’s components.